Oxygen in sputter-deposited ZnTe thin films

被引：15

作者：

Merita, S ^{[1
]}

Krämer, T

Mogwitz, B

Franz, B

Polity, A

Meyer, BK

机构：

[1] Univ Giessen, Inst Phys 1, Heinrich Buff Ring 16, D-35392 Giessen, Germany

[2] Univ Giessen, Phys Chem Institut, D-35392 Giessen, Germany

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 4 | 2006年 / 3卷 / 04期

关键词：

D O I：

10.1002/pssc.200564637

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Bandgap-bowing has been observed in many of the zinc-group-VI compounds, when the anion is substituted with an isovalent element. Recently new results on the ZnO1-xSx and ZnO1-xSex system have been presented, but so far only one report on ZnO1-xTex is known. We examine the possibility of substituting tellurium by oxygen in sputter-deposited polycrystalline ZnTe thin-films and the effects on bandgap energy and crystal structure. A first approximation of the bowing curve with a lower limit of the bowing parameter of 2.7 eV is performed. (c) 2006 WILEY-VCH Verlag GmbH & Co. KG&A, Wemheim.

引用

页码：960 / +

页数：2

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