Study on thermoluminescence of TlInS2 layered crystals doped with Pr

被引:4
作者
Delice, S. [1 ]
Isik, M. [2 ]
Gasanly, N. M. [3 ,4 ]
机构
[1] Hitit Univ, Dept Phys, TR-19040 Corum, Turkey
[2] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey
[3] Middle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkey
[4] Baku State Univ, Virtual Int Sci Res Ctr, Baku 1148, Azerbaijan
关键词
Thermoluminescence; Chalcogenides; Defects; Doping; SINGLE-CRYSTALS; THERMO-LUMINESCENCE; OPTICAL-PROPERTIES; TLGASE2; MODEL;
D O I
10.1016/j.mssp.2018.02.027
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Praseodymium (Pr) doped TlInS2 crystals were studied by means of thermoluminescence (TL) measurements performed below room temperature with various heating rates. Detected TL signal exhibited glow curve consisting in overlapping two TL peaks at temperatures of 35 K (peak A) and 48 K (peak B) for 0.6 K/s heating rate. TL curve was analyzed with curve fitting and initial rise methods. Both of the applied methods resulted in consistent activation energies of 19 and 45 meV. The revealed trap levels were found to be dominated by mixed order of kinetics. Various heating rate dependencies of TL glow curves were also investigated and it was found that while peak A shows usual behavior, peak B exhibits anomalous heating rate behavior. Distribution of trap levels was explored using an experimental method called as T-max-T-stop method. Quasi-continuous distributions with increasing activation energies from 19 to 29 meV (peak A) and from 45 to 53 meV (peak B) were ascribed to trap levels. Effect of Pr doping on the TL response of undoped TlInS2 crystals was discussed in the paper.
引用
收藏
页码:99 / 103
页数:5
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