Detection of electrically formed photosensitive area in Ca-doped BiFeO3 thin films

被引：28

作者：

Bharathi, K. Kamala ^{[1
]}

Lee, Won-Mo ^{[2
]}

Sung, Ji Ho ^{[3
]}

Lim, Ji Soo ^{[1
]}

Kim, Seung Jin ^{[1
]}

Chu, Kanghyun ^{[1
]}

Park, Jung Won ^{[4
]}

Song, Jong Hyun ^{[4
]}

Jo, Moon-Ho ^{[3
]}

Yang, Chan-Ho ^{[1
,5
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Phys, Taejon 305701, South Korea

[2] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 790784, South Korea

[3] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

[4] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

[5] Korea Adv Inst Sci & Technol, Inst NanoCentury, Taejon 305701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

OXIDE; FERROELECTRICS; TRANSITION; STRAIN;

D O I：

10.1063/1.4774381

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the visualization of n-p junctions formed by oxygen vacancy movement under the application of an electric field in a Ca-doped BiFeO3 thin film through spatially resolved scanning photocurrent mapping. The photocurrent mapping, in conjunction with the spectroscopic approach, provides clues to local electronic structures and defect levels associated with oxygen vacancies. These observations provide insights into the spatial redistribution of oxygen vacancies in an electric field. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4774381]

引用

页数：5

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