Study of the structural and optical properties of GaPN thin films grown by magnetron RF sputtering

被引：8
作者：
Pulzara-Mora, A
Meléndez-Lira, M
Jiménez-Sandoval, S
Lopez-Lopez, M
机构：
[1] Inst Politecn Nacl, Ctr Invest & Estudios Avanzados, Dept Fis, Mexico City 07000, DF, Mexico
[2] Univ Nacl Colombia, Sede Manizales, Manizales 127AA, Colombia
[3] IPN, Ctr Invest & Estud Avanzados, Unidad Queretaro, Queretaro, Mexico
来源：
VACUUM | 2006年 / 80卷 / 05期
关键词：
GaPN; RF magnetron sputtering; band gap; Raman spectroscopy;
D O I：
10.1016/j.vacuum.2005.07.039
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
GaP1-xNx thin films were deposited on glass substrates by RF sputtering employing a nitrogen-argon atmosphere in a partial pressure of 2 x 10(-2)Torr. We varied the growth temperature in the range 420-520 degrees C. The film's optical properties were studied by transmittance and absorbance spectroscopy. Characterization by scanning electron microscopy in cross-sectional view, atomic force microscopy, and X-ray diffraction was performed to determinate the film thickness, surface morphology, and crystal structure, respectively. Raman spectroscopy was employed to analyze the structural properties of samples. The GaP1-xNx films presented a cubic polycrystalline structure with a preferential orientation along the [111] direction. By varying the growth conditions we were able to change the band gap energy between 1.35 and 1.98eV. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：468 / 474
页数：7
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