Electrical properties of high energy ion irradiated 4H-SiC Schottky diodes

被引：25
作者：
Izzo, G. [1 ]
Litrico, G. [1 ]
Calcagno, L. [1 ]
Foti, G. [1 ]
La Via, F. [2 ]
机构：
[1] Catania Univ, Dept Phys, I-95123 Catania, Italy
[2] CNR IMM, Sez Catania, I-95123 Catania, Italy
来源：
JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 09期
关键词：
D O I：
10.1063/1.3018456
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The changes in the electrical properties of 4H-SiC epitaxial layer induced by irradiation with 7.0 MeV C(+) ions were investigated by current-voltage measurements and deep level transient spectroscopy (DLTS). Current-voltage characteristics of the diodes fabricated from epilayers doped with different nitrogen concentrations were monitored before and after irradiation in the fluence range of 10(9)-10(10) cm(-2). The leakage current was not changed after irradiation, while the forward current-voltage characteristics of the diodes showed an increase in the series resistance, which is mainly related to the high degree of compensation occurring near the end of the ion implant depth. The temperature dependence of the carrier mobility determined from the I-V measurements in the temperature range of 100-700 K shows a T(-3) dependence of mobility as determined from the nonirradiated as well as the irradiated diodes. DLTS measurements of the irradiated diodes reveal the presence of two deep levels located at 0.98 and 1.4 eV below the conduction band edge. (c) 2008 American Institute of Physics. [DOI: 10.1063/1.3018456]
引用
收藏
页数：5
相关论文
共 33 条
[1]   Nitrogen deactivation by implantation-induced defects in 4H-SiC epitaxial layers [J].
Åberg, D ;
Hallén, A ;
Pellegrino, P ;
Svensson, BG .
APPLIED PHYSICS LETTERS, 2001, 78 (19) :2908-2910
[2]   A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS [J].
BIERSACK, JP ;
HAGGMARK, LG .
NUCLEAR INSTRUMENTS & METHODS, 1980, 174 (1-2) :257-269
[3]   Ionization energies and electron mobilities in phosphorus- and nitrogen-implanted 4H-silicon carbide [J].
Capano, MA ;
Cooper, JA ;
Melloch, MR ;
Saxler, A ;
Mitchel, WC .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (12) :8773-8777
[4]   Low temperature annealing of electron irradiation induced defects in 4H-SiC [J].
Castaldini, A ;
Cavallini, A ;
Rigutti, L ;
Nava, F .
APPLIED PHYSICS LETTERS, 2004, 85 (17) :3780-3782
[5]  
Dalibor T, 1997, PHYS STATUS SOLIDI A, V162, P199, DOI 10.1002/1521-396X(199707)162:1<199::AID-PSSA199>3.0.CO
[6]  
2-0
[7]   Midgap levels in both n- and p-type 4H-SiC epilayers investigated by deep level transient spectroscopy -: art. no. 122104 [J].
Danno, K ;
Kimoto, T ;
Matsunami, H .
APPLIED PHYSICS LETTERS, 2005, 86 (12) :1-3
[8]   Electrically active point defects in n-type 4H-SiC [J].
Doyle, JP ;
Linnarsson, MK ;
Pellegrino, P ;
Keskitalo, N ;
Svensson, BG ;
Schoner, A ;
Nordell, N ;
Lindstrom, JL .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (03) :1354-1357
[9]   Nitrogen and aluminum implantation in high resistivity silicon carbide [J].
Dwight, D ;
Rao, MV ;
Holland, OW ;
Kelner, G ;
Chi, PH ;
Kretchmer, J ;
Ghezzo, M .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (11) :5327-5333
[10]   High-purity and high-quality 4H-SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition [J].
Fujihira, K ;
Kimoto, T ;
Matsunami, H .
APPLIED PHYSICS LETTERS, 2002, 80 (09) :1586-1588
1234