Direct electroplating of copper on tantalum from ionic liquids in high vacuum: origin of the tantalum oxide layer

被引:16
作者
Schaltin, Stijn [1 ]
D'Urzo, Lucia [1 ]
Zhao, Qiang [2 ]
Vantomme, Andre [2 ]
Plank, Harald [3 ]
Kothleitner, Gerald [3 ]
Gspan, Christian [3 ]
Binnemans, Koen [4 ]
Fransaer, Jan [1 ]
机构
[1] KU Leuven Univ Leuven, Dept Met & Mat Engn, B-3001 Louvain, Belgium
[2] KU Leuven Univ Leuven, Inst Kern Stralingsfys, B-3001 Louvain, Belgium
[3] Graz Univ Technol, Inst Electron Microscopy & Fine Struct Res, A-8010 Graz, Austria
[4] KU Leuven Univ Leuven, Dept Chem, B-3001 Louvain, Belgium
关键词
NUCLEAR MICROANALYSIS; PHYSICAL-PROPERTIES; DIFFUSION BARRIER; ANODIC OXIDATION; ORGANIC-SOLVENTS; GROWTH LAWS; WATER; OXYGEN; ELECTRODEPOSITION; ALUMINUM;
D O I
10.1039/c2cp41786c
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this paper, it is shown that high vacuum conditions are not sufficient to completely remove water and oxygen from the ionic liquid 1-ethyl-3-methylimidazolium chloride. Complete removal of water demands heating above 150 degrees C under reduced pressure, as proven by Nuclear Reaction Analysis (NRA). Dissolved oxygen gas can only be removed by the use of an oxygen scavenger such as hydroquinone, despite the fact that calculations show that oxygen should be removed completely by the applied vacuum conditions. After applying a strict drying procedure and scavenging of molecular oxygen, it was possible to deposit copper directly on tantalum without the presence of an intervening oxide layer.
引用
收藏
页码:13624 / 13629
页数:6
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