Valley polarization in Si(100) at zero magnetic field

被引:139
作者
Takashina, K. [1 ]
Ono, Y.
Fujiwara, A.
Takahashi, Y.
Hirayama, Y.
机构
[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[2] JST, SORST, Kawaguchi, Saitama 3310012, Japan
关键词
D O I
10.1103/PhysRevLett.96.236801
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The valley splitting, which lifts the degeneracy of the lowest two valley states in a SiO2/Si(100)/SiO2 quantum well, is examined through transport measurements. We demonstrate that the valley splitting can be observed directly as a step in the conductance defining a boundary between valley-unpolarized and -polarized regions. This persists to well above liquid helium temperature and shows no dependence on magnetic field, indicating that single-particle valley splitting and valley polarization exist in (100) silicon even at zero magnetic field.
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页数:4
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