Interconnect Reliability Assurance for Circuits with Billions of Transistors

被引：0

作者：

Turner, Timothy E. ^{[1
]}

机构：

[1] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12222 USA

来源：

PROCEEDINGS OF THE 2013 20TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2013) | 2013年

关键词：

Electromigration; ILD TDDB Semiconductor Reliability;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The small number of atoms involved in a 20nm conductor makes the conductor susceptible to the local variation in stress, grain structure and surrounding dielectric consistency. This leads to a larger variation in the performance of each metal line or via. At the same time, we increase the number of metal lines on a chip. The results is a complex failure distribution that will require design mitigation to accomplish the goals set for the product.

引用

页码：149 / 152

页数：4