共 1 条
- [1] The long-wavelength limit of the structure factor of amorphous silicon and vitreous silicaACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2010, 66 : 22 - 31de Graff, Adam M. R.Thorpe, M. F.
Hyperuniformity in amorphous silicon based on the measurement of the infinite-wavelength limit of the structure factor
被引：68
|作者：
Xie, Ruobing
[1
]
Long, Gabrielle G.
[1
,2
]
Weigand, Steven J.
[3
]
Moss, Simon C.
[4
,5
]
Carvalho, Tobi
[6
]
Roorda, Sjoerd
[6
]
Hejna, Miroslav
[7
]
Torquato, Salvatore
[7
,8
,9
]
Steinhardt, Paul J.
[7
,10
]
机构：
[1] Argonne Natl Lab, Xray Sci Div, Argonne, IL 60439 USA
[2] NIST, Mat Measurement Lab, Gaithersburg, MD 20899 USA
[3] Northwestern Univ, Argonne Natl Lab, DuPont Northwestern Dow Collaborat Access Team Sy, Argonne, IL 60439 USA
[4] Univ Houston, Dept Phys, Houston, TX 77204 USA
[5] Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA
[6] Univ Montreal, Dept Phys, Montreal, PQ H3C 3J7, Canada
[7] Princeton Univ, Dept Phys, Princeton, NJ 08544 USA
[8] Princeton Univ, Dept Chem, Princeton, NJ 08544 USA
[9] Princeton Univ, Princeton Inst Sci & Technol Mat, Princeton, NJ 08544 USA
[10] Princeton Univ, Princeton Ctr Theoret Sci, Princeton, NJ 08544 USA
来源：
基金：
美国国家科学基金会;
关键词：
glass;
disordered solid;
ENERGY BARRIER;
SI;
DIFFRACTION;
RELAXATION;
SCATTERING;
ORDER;
GE;
D O I：
10.1073/pnas.1220106110
中图分类号：
O [数理科学和化学];
P [天文学、地球科学];
Q [生物科学];
N [自然科学总论];
学科分类号：
07 ;
0710 ;
09 ;
摘要：
We report the results of highly sensitive transmission X-ray scattering measurements performed at the Advanced Photon Source, Argonne National Laboratory, on nearly fully dense high-purity amorphous-silicon (a-Si) samples for the purpose of determining their degree of hyperuniformity. A perfectly hyperuniform structure has complete suppression of infinite-wavelength density fluctuations, or, equivalently, the structure factor S(q -> 0) = 0; the smaller the value of S(0), the higher the degree of hyperuniformity. Annealing was observed to increase the degree of hyperuniformity in a-Si where we found S(0) = 0.0075 (+/- 0.0005), which is significantly below the computationally determined lower bound recently suggested by de Graff and Thorpe [de Graff AMR, Thorpe MF (2010) Acta Crystallogr A 66(Pt 1):22-31] based on studies of continuous random network models, but consistent with the recently proposed nearly hyperuniform network picture of a-Si. Increasing hyperuniformity is correlated with narrowing of the first diffraction peak and extension of the range of oscillations in the pair distribution function.
引用
收藏
页码：13250 / 13254
页数：5
相关论文