Dependence of charge trapping and tunneling on the silicon-nitride (Si3N4) thickness for tunnel barrier engineered nonvolatile memory applications

被引：35

作者：

Jung, Myung-Ho ^{[1
]}

Kim, Kwan-Su ^{[1
]}

Park, Goon-Ho ^{[1
]}

Cho, Won-Ju ^{[1
]}

机构：

[1] Kwangwoon Univ, Dept Elect Mat Engn, Seoul 139701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 05期

关键词：

electron traps; high-k dielectric thin films; hole traps; random-access storage; silicon compounds; tunnelling; LAYER; HFO2;

D O I：

10.1063/1.3078279

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Charge trapping and tunneling characteristics of silicon-nitride (Si3N4) layer with various thicknesses were investigated for applications of tunnel barrier engineered nonvolatile memory (NVM). A critical thickness of Si3N4 layer for suppressing the charge trapping and enhancing the tunneling sensitivity of tunnel barrier were developed. Also, the charge trap centroid and charge trap density were extracted by constant current stress method. As a result, the optimization of Si3N4 thickness considerably improved the performances of NVM.

引用

页数：3

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