Van der Waals epitaxial growth of MoS2 on SiO2/Si by chemical vapor deposition

被引：35

作者：

Cheng, Yingchun ^{[1
]}

Yao, Kexin ^{[2
]}

Yang, Yang ^{[3
]}

Li, Liang ^{[3
]}

Yao, Yingbang ^{[3
]}

Wang, Qingxiao ^{[3
]}

Zhang, Xixiang ^{[3
]}

Han, Yu ^{[2
]}

Schwingenschloegl, Udo ^{[1
]}

机构：

[1] KAUST, Div Phys Sci & Engn PSE, Thuwal 239556900, Saudi Arabia

[2] KAUST, Adv Membranes & Porous Mat Ctr, Thuwal 239556900, Saudi Arabia

[3] KAUST, Adv Nanofabricat & Imaging Core Lab, Thuwal 239556900, Saudi Arabia

来源：

RSC ADVANCES | 2013年 / 3卷 / 38期

关键词：

THIN-FILM TRANSISTORS; LARGE-AREA; VALLEY POLARIZATION; INTEGRATED-CIRCUITS; HYDROGEN EVOLUTION; MONOLAYER MOS2; ATOMIC LAYERS; GRAPHENE; CATALYST;

D O I：

10.1039/c3ra42171f

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Recently, single layer MoS2 with a direct band gap of 1.9 eV has been proposed as a candidate for two dimensional nanoelectronic devices. However, the synthetic approach to obtain high-quality MoS2 atomic thin layers is still problematic. Spectroscopic and microscopic results reveal that both single layers and tetrahedral clusters of MoS2 are deposited directly on the SiO2/Si substrate by chemical vapor deposition. The tetrahedral clusters are mixtures of 2H-and 3R-MoS2. By ex situ optical analysis, both the single layers and tetrahedral clusters can be attributed to van der Waals epitaxial growth. Due to the similar layered structures we expect the same growth mechanism for other transition-metal disulfides by chemical vapor deposition.

引用

页码：17287 / 17293

页数：7

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