Passively modelocked 832 nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3 ps pulses at 1.9 GHz repetition rate

被引：9

作者：

Wilcox, K. G. ^{[1
]}

Mihoubi, Z. ^{[1
]}

Elsmere, S. ^{[1
]}

Quarterman, A. ^{[1
]}

Foreman, H. D. ^{[2
]}

Hashimoto, S. ^{[3
]}

Suedmeyer, T. ^{[3
]}

Keller, U. ^{[3
]}

Tropper, A. ^{[1
]}

机构：

[1] Univ Southampton, Sch Phys & Astron, Southampton SO17 1BJ, Hants, England

[2] Engn & Phys Sci Res Council, Swindon SN2 1ET, Wilts, England

[3] ETH, CH-8092 Zurich, Switzerland

来源：

ELECTRONICS LETTERS | 2008年 / 44卷 / 25期

关键词：

D O I：

10.1049/el:20089345

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A passively modelocked 832 nm vertical-external-cavity surface-emitting laser, producing pulses of a duration of 15.3 ps at a repetition rate of 1.9 GHz, has been demonstrated. A fast surface-recombination semiconductor saturable absorber mirror, with a bi-temporal absorption recovery characteristic, consisting of fast and slow time constants of 1.5 and 200 ps, respectively, was used to form the pulses.

引用

页码：1469 / +

页数：2

共 7 条

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