Ultrahigh-Efficiency Phosphor-Free InGaN/GaN Nanowire White Light-Emitting Diodes on Silicon

被引：0
|
作者：
Mi, Z. [1 ]
Nguyen, H. P. T. [1 ]
Zhang, S. [1 ]
Djavid, M. [1 ]
机构：
[1] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 2A7, Canada
来源：
2012 IEEE PHOTONICS CONFERENCE (IPC) | 2012年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the achievement of InGaN/GaN dot-in-a-wire phosphor-free white light-emitting diodes, which can exhibit a record internal quantum efficiency of similar to 57% and virtually zero efficiency droop for injection currents up to similar to 2,200 A/cm(2).
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收藏
页码：429 / 430
页数：2
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