Self-organized ordering in self-assembled quantum dot superlattices
被引:13
作者:
Springholz, G
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机构:Johannes Kepler Univ, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria
Springholz, G
Holy, V
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机构:Johannes Kepler Univ, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria
Holy, V
Mayer, P
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机构:Johannes Kepler Univ, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria
Mayer, P
Pinczolits, M
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机构:Johannes Kepler Univ, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria
Pinczolits, M
Raab, A
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机构:Johannes Kepler Univ, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria
Raab, A
Lechner, RT
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机构:Johannes Kepler Univ, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria
Lechner, RT
Bauer, G
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机构:Johannes Kepler Univ, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria
Bauer, G
Kang, H
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机构:Johannes Kepler Univ, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria
Kang, H
Salamanca-Riba, L
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机构:Johannes Kepler Univ, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria
Salamanca-Riba, L
机构:
[1] Johannes Kepler Univ, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria
[2] Masaryk Univ, Lab Thin Films & Nanostruct, Brno 61137, Czech Republic
[3] Univ Maryland, Dept Mat & Nucl Engn, College Pk, MD 20742 USA
来源:
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
|
2002年
/
88卷
/
2-3期
关键词:
quantum dots;
superlattices;
molecular beam epitaxy;
lead selenide;
nanostructures;
D O I:
10.1016/S0921-5107(01)00872-8
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Self-organized vertical and lateral ordering in self-assembled quantum dot superlattices is based on long-range elastic interactions between the growing dots on the surface and those buried in the previous superiattice layers. These interactions may lead to a correlated dot nucleation and to the formation of ordered superstructures. For various materials systems different types of structures may be formed, ranging from vertically aligned dot superlattices for Si-Ge or III-V semiconductors to an fcc-like ABCABC...stacking in IV-VI materials. These differences are caused by the given elastic anisotropy of the superlattice materials. From systematic theoretical calculations, for all materials with high elastic anisotropy and growth orientations parallel to an elastically soft direction, layer-to-layer dot correlations inclined to the growth direction may be formed. Further changes in the dot correlations are caused by the modification of the elastic strain fields by the finite extent and shape of the buried islands. This is illustrated for IV-VI PbSe/PbEuTe dot superlattices, where either vertically aligned or fcc-stacked dot arrangements are formed as a function of spacer thickness. (C) 2002 Elsevier Science B.V. All rights reserved.