Assessment of Ambipolar Behavior of a Tunnel FET and Influence of Structural Modifications

被引：83

作者：

Narang, Rakhi ^{[1
]}

Saxena, Manoj ^{[2
]}

Gupta, R. S. ^{[3
]}

Gupta, Mridula ^{[1
]}

机构：

[1] Univ Delhi, Dept Elect Sci, Semicond Device Res Lab, New Delhi 110021, India

[2] Univ Delhi, Dept Elect, New Delhi 110015, India

[3] Maharaja Agrasen Inst Technol, Dept Elect & Commun Engn, New Delhi 110086, India

来源：

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2012年 / 12卷 / 04期

关键词：

Ambipolar; gate drain underlap (GDU); heterogate (HG); p-i-n; p-n-p-n; tunnel FET;

D O I：

10.5573/JSTS.2012.12.4.482

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the present work, comprehensive investigation of the ambipolar characteristics of two silicon (Si) tunnel field-effect transistor (TFET) architectures (i.e. p-i-n and p-n-p-n) has been carried out. The impact of architectural modifications such as heterogeneous gate (HG) dielectric, gate drain underlap (GDU) and asymmetric source/drain doping on the ambipolar behavior is quantified in terms of physical parameters proposed for ambipolarity characterization. Moreover, the impact on the miller capacitance is also taken into consideration since ambipolarity is directly related to reliable logic circuit operation and miller capacitance is related to circuit performance.

引用

页码：482 / 491

页数：10

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