Field-Dependent Measurement of GaAs Composition by Atom Probe Tomography

被引：24

作者：

Di Russo, Enrico ^{[1
]}

Blum, Ivan ^{[1
]}

Houard, Jonathan ^{[1
]}

Da Costa, Gerald ^{[1
]}

Blavette, Didier ^{[1
]}

Rigutti, Lorenzo ^{[1
]}

机构：

[1] Normandie Univ, UNIROUEN, CNRS, INSA Rouen,Grp Phys Mat, F-76000 Rouen, France

来源：

MICROSCOPY AND MICROANALYSIS | 2017年 / 23卷 / 06期

关键词：

atom probe tomography; GaAs; composition analysis; metrology; compositional accuracy; SEMICONDUCTOR-MATERIALS; ELECTRIC-FIELD; LASER; EVAPORATION; DESIGN; IONS;

D O I：

10.1017/S1431927617012582

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The composition of GaAs measured by laser-assisted atom probe tomography may be inaccurate depending on the experimental conditions. In this work, we assess the role of the DC field and the impinging laser energy on such compositional bias. The DC field is found to have a major influence, while the laser energy has a weaker one within the range of parameters explored. The atomic fraction of Ga may vary from 0.55 at low-field conditions to 0.35 at high field. These results have been interpreted in terms of preferential evaporation of Ga at high field. The deficit of As is most likely explained by the formation of neutral As complexes either by direct ejection from the tip surface or upon the dissociation of large clusters. The study of multiple detection events supports this interpretation.

引用

页码：1067 / 1075

页数：9

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