NROM™ -: a new non-volatile memory technology:: from device to products

被引：16
|
作者：
Bloom, I
Pavan, P
Eitan, B
机构：
[1] Saifun Semicond, IL-42504 Netanya, Israel
[2] Univ Modena & Reggio Emilia, DSI, I-41100 Modena, Italy
[3] Univ Modena & Reggio Emilia, INFM, I-41100 Modena, Italy
来源：
MICROELECTRONIC ENGINEERING | 2001年 / 59卷 / 1-4期
关键词：
non-volatile memory; NROM (TM); multibit per cell; two-bit per cell; flash; EEPROM; embedded NVM;
D O I：
10.1016/S0167-9317(01)00625-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
NROM (TM) - a new NVM technology has recently been introduced, enabling three major improvements relative to the floating gate technology: one technology for all NVM products (Flash, EEPROM, ROM and Embedded), higher density (2.5F(2) per bit in flash) and simple process with reduced number of masks without any exotic materials. The NROM (TM) cell is based on localized charge trapping above the junction edge, enabling physically separated two bits per cell. Performance of new NVM NROM (TM) based products show endurance up to 100 K with retention of 10 years at 150 degreesC. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：213 / 223
页数：11
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