5.6-W broad-area lasers with a vertical far-field angle of 31° emitting at 670 nm

被引：21

作者：

Sumpf, Bernd ^{[1
]}

Zorn, Martin ^{[1
]}

Maiwald, Martin ^{[1
]}

Staske, Ralf ^{[1
]}

Fricke, Joerg ^{[1
]}

Ressel, Peter ^{[1
]}

Erbert, Goetz ^{[1
]}

Weyers, Markus ^{[1
]}

Traenkle, Guenther ^{[1
]}

机构：

[1] Ferdinand Braun Inst Hochstfrequenz Tech, Optoelect Dept, D-12489 Berlin, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2008年 / 20卷 / 5-8期

关键词：

continuous-wave lasers; laser reliability; red lasers; semiconductor lasers;

D O I：

10.1109/LPT.2008.918868

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Highly efficient 670-nm high-power broad-area laser diodes with a single InGaP quantum-well embedded in AlGaInP waveguide layers and n-AlInP and p-AIGaAs cladding layers are presented. The developed vertical layer structure leads to a vertical far-field angle of 310. At 15 degrees C, 100-mu m-wide broad-area lasers reach an output power of 5.6 W limited by thermal rollover. The conversion efficiency was 41% at 1.5 W.A 7600-h reliable operation at 1.5 W and a mean time to failure of about 37550 h will be reported.

引用

页码：575 / 577

页数：3

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