5.6-W broad-area lasers with a vertical far-field angle of 31° emitting at 670 nm

被引:21
|
作者
Sumpf, Bernd [1 ]
Zorn, Martin [1 ]
Maiwald, Martin [1 ]
Staske, Ralf [1 ]
Fricke, Joerg [1 ]
Ressel, Peter [1 ]
Erbert, Goetz [1 ]
Weyers, Markus [1 ]
Traenkle, Guenther [1 ]
机构
[1] Ferdinand Braun Inst Hochstfrequenz Tech, Optoelect Dept, D-12489 Berlin, Germany
关键词
continuous-wave lasers; laser reliability; red lasers; semiconductor lasers;
D O I
10.1109/LPT.2008.918868
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Highly efficient 670-nm high-power broad-area laser diodes with a single InGaP quantum-well embedded in AlGaInP waveguide layers and n-AlInP and p-AIGaAs cladding layers are presented. The developed vertical layer structure leads to a vertical far-field angle of 310. At 15 degrees C, 100-mu m-wide broad-area lasers reach an output power of 5.6 W limited by thermal rollover. The conversion efficiency was 41% at 1.5 W.A 7600-h reliable operation at 1.5 W and a mean time to failure of about 37550 h will be reported.
引用
收藏
页码:575 / 577
页数:3
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