Advances in AlGaInN blue and ultraviolet light emitters

被引：21
作者：
Han, J [1 ]
Nurmikko, AV
机构：
[1] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA
[2] Brown Univ, Div Engn, Providence, RI 02912 USA
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2002年 / 8卷 / 02期
基金：
美国国家科学基金会;
关键词：
III-N; AlGaInN; LED; vertical cavity;
D O I：
10.1109/2944.999183
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we discuss the current status and the considerable challenges for extending the nitride light sources into deeper ultraviolet (UV). We also review recent progress in exploratory blue and near UV Ill-nitride light emitters, such as vertical cavity devices and dual-wavelength light-emitting diodes, which may provide useful device templates for applications in the deeper UV.
引用
收藏
页码：289 / 297
页数：9
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