Advanced low temperature bonding technologies

被引:0
|
作者
Pelzer, R [1 ]
Dragoi, V [1 ]
Kettner, P [1 ]
Lee, D [1 ]
机构
[1] EV Grp, A-4780 Schaerding, Austria
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The different fields and especially its various applications for micro electro mechanical systems (MEMS) prevent the use of uniform packaging techniques for all types of p-device. Several bonding techniques performed at wafer-scale, with the advantage of protecting the device against particles, contaminations or even damage during the sawing and dicing process are used right now. Most of these techniques are performed at high temperatures during the bond, wet cleaning process steps - totally inapplicable for la-moving parts - or insufficient hermeticity in the final package. Bonding techniques based on dry plasma activation and adhesive wafer-level bonding of MEMS are therefore a very interesting alternative to the common techniques. Main advantages of these two techniques are: temperature sensitive devices or heterogeneous materials with different CTE can be bonded together on wafer scale; there are no wet activation or cleaning processes involved.
引用
收藏
页码:34 / 38
页数:5
相关论文
共 50 条
  • [1] Low Temperature Wafer Bonding Technologies
    Haubold, Marco
    Baum, Mario
    Schubert, Ina
    Leidich, Stefan
    Wiemer, Maik
    Gessner, Thomas
    EMPC-2011: 18TH EUROPEAN MICROELECTRONICS & PACKAGING CONFERENCE, 2011,
  • [2] Low-Temperature Bonding Technologies for Photonics Applications
    Higurashi, E.
    SEMICONDUCTOR WAFER BONDING 12: SCIENCE, TECHNOLOGY, AND APPLICATIONS, 2012, 50 (07): : 351 - 362
  • [3] Gettering technologies in advanced low temperature process
    Sano, M
    Ohgushi, S
    Sadamitsu, S
    Tsuya, H
    PROCEEDINGS OF THE SYMPOSIUM ON CRYSTALLINE DEFECTS AND CONTAMINATION: THEIR IMPACT AND CONTROL IN DEVICE MANUFACTURING II, 1997, 97 (22): : 281 - 294
  • [5] Review of low-temperature bonding technologies and their application in optoelectronic devices
    Higurashi, Eiji
    Suga, Tadatomo
    IEEJ Transactions on Sensors and Micromachines, 2014, 134 (06) : 159 - 165
  • [6] Review of Low-Temperature Bonding Technologies and Their Application in Optoelectronic Devices
    Higurashi, Eiji
    Suga, Tadatomo
    ELECTRONICS AND COMMUNICATIONS IN JAPAN, 2016, 99 (03) : 63 - 71
  • [7] Combined Surface-Activated Bonding (SAB) Technologies for New Approach to Low Temperature Wafer Bonding
    He, Ran
    Fujino, Masahisa
    Yamauchi, Akira
    Suga, Tadatomo
    SEMICONDUCTOR WAFER BONDING 13: SCIENCE, TECHNOLOGY, AND APPLICATIONS, 2014, 64 (05): : 83 - 93
  • [8] Low-temperature bonding technologies for MEMS and 3D-IC
    Taklo, M. M. V.
    Schjolberg-Henriksen, K.
    Malik, N.
    Tofteberg, H. R.
    Poppe, E.
    Vella, D. O.
    Borg, J.
    Attard, A.
    Hajdarevic, Z.
    Klumpp, A.
    Ramm, P.
    2014 4TH IEEE INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D), 2014, : 34 - 34
  • [9] Low-temperature bonding technologies for MEMS and 3D-IC
    20143818167102
    (1) SINTEF, Oslo, Norway; (2) STMicroelectronics Malta, Kirkop, Malta; (3) Besi Austria GmbH, Radfeld, Austria; (4) Fraunhofer EMFT, Munich, Germany; (5) University of Oslo, Oslo, Norway, 1600, Technology Society; The IEEE Components, Packaging, and Manufacturing (IEEE Computer Society):
  • [10] Development of novel low temperature bonding technologies for microchip chemical analysis applications
    Sayah, A
    Solignac, D
    Cueni, T
    Gijs, MAM
    SENSORS AND ACTUATORS A-PHYSICAL, 2000, 84 (1-2) : 103 - 108