Identification of atomic-like electronic states in indium arsenide nanocrystal quantum dots

被引:524
作者
Banin, U
Cao, YW
Katz, D
Millo, O [1 ]
机构
[1] Hebrew Univ Jerusalem, Racah Inst Phys, IL-91904 Jerusalem, Israel
[2] Hebrew Univ Jerusalem, Farkas Ctr Light Induced Proc, IL-91904 Jerusalem, Israel
[3] Hebrew Univ Jerusalem, Dept Phys Chem, IL-91904 Jerusalem, Israel
关键词
D O I
10.1038/22979
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Semiconductor quantum dots, due to their small size, mark the transition between molecular and solid-state regimes, and are often described as 'artificial atoms' (refs 1-3). This analogy originates from the early work on quantum confinement effects in semiconductor nanocrystals, where the electronic wavefunctions are predicted(4) to exhibit atomic-like symmetries, for example 's' and 'p'. Spectroscopic studies of quantum dots have demonstrated discrete energy level structures and narrow transition linewidths(5-9), but the symmetry of the discrete states could be inferred only indirectly. Here we use cryogenic scanning tunnelling spectroscopy to identify directly atomic-like electronic states with s and p character in a series of indium arsenide nanocrystals. These states are manifest in tunnelling current-voltage measurements as two- and six-fold single-electron-charging multiplets respectively, and they follow an atom-like Aufbau principle of sequential energy level occupation(10).
引用
收藏
页码:542 / 544
页数:3
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