Giant Thermovoltage in Single InAs Nanowire Field-Effect Transistors

被引：60
作者：
Roddaro, Stefano [1 ,2 ,3 ]
Ercolani, Daniele [1 ,2 ]
Safeen, Mian Akif [1 ,2 ]
Suomalainen, Soile [4 ]
Rossella, Francesco [1 ,2 ]
Giazotto, Francesco [1 ,2 ]
Sorba, Lucia [1 ,2 ]
Beltram, Fabio [1 ,2 ]
机构：
[1] Scuola Normale Super Pisa, NEST, I-56127 Pisa, Italy
[2] CNR, Ist Nanosci, I-56127 Pisa, Italy
[3] CNR, Ist Officina Mat, I-34149 Trieste, Italy
[4] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland
来源：
NANO LETTERS | 2013年 / 13卷 / 08期
基金：
芬兰科学院;
关键词：
Nanowire; Seebeck; field effect; thermoelectric; mobility; hysteresis; QUANTUM DOTS; EFFICIENCY;
D O I：
10.1021/nl401482p
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Millivolt range thermovoltage is demonstrated in single InAs nanowire based field effect transistors. Thanks to a buried heating scheme, we drive both a large thermal bias Delta T > 10 K and a strong field-effect modulation of electric conductance on the nanostructures. This allows the precise mapping of the evolution of the Seebeck coefficient S as a function of the gate-controlled conductivity sigma between room temperature and 100 K. Based on these experimental data a novel estimate of the electron mobility is given. This value is compared with the result of standard field-effect based mobility estimates and discussed in relation to the effect of charge traps in the devices.
引用
收藏
页码：3638 / 3642
页数：5
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