Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices

被引：31

作者：

Chang, Kuan-Chang ^{[1
]}

Tsai, Tsung-Ming ^{[1
]}

Chang, Ting-Chang ^{[2
,3
]}

Wu, Hsing-Hua ^{[4
,5
]}

Chen, Kai-Huang ^{[6
]}

Chen, Jung-Hui ^{[7
]}

Young, Tai-Fa ^{[8
]}

Chu, Tian-Jian ^{[1
]}

Chen, Jian-Yu ^{[2
,3
]}

Pan, Chih-Hung ^{[1
]}

Su, Yu-Ting ^{[2
,3
]}

Syu, Yong-En ^{[2
,3
]}

Tung, Cheng-Wei ^{[1
]}

Chang, Geng-Wei ^{[4
,5
]}

Chen, Min-Chen ^{[2
,3
]}

Huang, Hui-Chun ^{[1
]}

Tai, Ya-Hsiang ^{[4
,5
]}

Gan, Der-Shin ^{[1
]}

Wu, Jia-Jie ^{[9
]}

Hu, Ying ^{[9
]}

Sze, Simon M. ^{[2
,10
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 804, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[4] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30050, Taiwan

[5] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30050, Taiwan

[6] Tung Fang Design Univ, Dept Elect Engn & Comp Sci, Kaohsiung 807, Taiwan

[7] Natl Kaohsiung Normal Univ, Dept Chem, Kaohsiung 80543, Taiwan

[8] Natl Sun Yat Sen Univ, Dept Mech & Electromech Engn, Kaohsiung 804, Taiwan

[9] Xidian Univ, Sch Tech Phys, Xian 710071, Peoples R China

[10] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30050, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 04期

关键词：

Nonvolatile memory; resistive switching; silicon oxide; zinc; RRAM;

D O I：

10.1109/LED.2013.2248075

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To improve the resistive switching properties of the resistive random access memory (RRAM), the supercritical carbon dioxide (SCCO2) fluid is used as a low temperature treatment. In this letter, the Zn:SiOx thin films are treated by SCCO2 fluid mixed with pure water. After SCCO2 fluid treatment, the resistive switching qualities of the Zn:SiOx thin films are carried out by XPS, fourier transform infrared spectroscopy, and IV measurement. We believe that the SCCO2-treated Zn:SiOx thin film is a promising material for RRAM applications due to its compatibility with portable flat panel display.

引用

页码：511 / 513

页数：3

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