Cotunneling at resonance for the single-electron transistor

被引：113
|
作者：
Konig, J
Schoeller, H
Schon, G
机构：
[1] Institut für Theoretische Festkörperphysik, Universität Karlsruhe, Karlsruhe
来源：
PHYSICAL REVIEW LETTERS | 1997年 / 78卷 / 23期
关键词：
D O I：
10.1103/PhysRevLett.78.4482
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We study electron transport through a small metallic island in the perturbative regime. Using a diagrammatic real-time technique, we calculate the occupation of the island as well as the conductance through the transistor to fourth order in the tunneling matrix elements, a process referred to as cotunneling. Our formulation does not require the introduction of a cutoff. At resonance we find deviations from previous theories and quantitative agreement with recent experiments.
引用
收藏
页码：4482 / 4485
页数：4
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