A fully CMOS-integrated pH-ISFET interface circuit

被引：0
|
作者：
Wei, JB [1 ]
Yang, HG [1 ]
Sun, HG [1 ]
Lin, ZJ [1 ]
Xia, SH [1 ]
机构：
[1] Chinese Acad Sci, Grad Sch, Inst Elect, Dept 9, Beijing 100080, Peoples R China
来源：
2005 6TH INTERNATIONAL CONFERENCE ON ASIC PROCEEDINGS, BOOKS 1 AND 2 | 2005年
关键词：
ISFET; sensor inter-face circuit; microsensor system integration; system-on-chip;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
ISFET is a potentiometric sensor that is easily adapted for a wide range of chemical, biochemical and biomedical measurements. This article presents an ISFET sensor system-on-chip including the ISFET/REFET (Reference FET) pair and ISFET/REFET amplifiers, bias current generator, as well as a reference electrode structure, all integrated on the same chip based on CMOS technology. The sensor chip is fabricated in a standard 0.35 mu m 4-metal and 2-poly layer CMOS process (Chartered Semiconductor) to which extra post processing steps are added for depositing membranes. The chip operates at 3.3V and the total die area is 5 mm(2). Finally the performance of the integrated sensor interface circuit is measured and analyzed.
引用
收藏
页码：414 / 416
页数：3
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