The Carrier Transport Properties of B-Doped Si Nanocrystal Films with Various Doping Concentrations

被引：2

作者：

Shan, Dan ^{[1
,2
,3
,4
]}

Cao, Yunqing ^{[2
,3
,4
,5
]}

Yang, Ruihong ^{[1
]}

Wang, Hongyu ^{[2
,3
,4
,6
]}

Tao, Tao ^{[1
]}

机构：

[1] Yangzhou Polytech Inst, Coll Informat Engn, Yangzhou 225127, Jiangsu, Peoples R China

[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[3] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Peoples R China

[4] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China

[5] Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225009, Jiangsu, Peoples R China

[6] Nanjing Univ Posts & Telecommun, Tongda Coll, Nanjing 210003, Peoples R China

来源：

JOURNAL OF NANOMATERIALS | 2020年 / 2020卷

基金：

中国博士后科学基金;

关键词：

ELECTRONIC TRANSPORT; SILICON; BORON;

D O I：

10.1155/2020/3698543

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

B-doped hydrogenated amorphous silicon (a-Si:H) films with various doping concentrations were prepared by a plasma-enhanced chemical vapor deposition (PECVD) technique. After thermal annealing, the as-deposited samples, B-doped silicon nanocrystals (Si NCs), were obtained in the films. The electronic properties of B-doped Si NC films with various doping concentrations combined with the microstructural characterization were investigated. A significant improvement of Hall mobility rising to the maximum of 17.8 cm(2)/V.s was achieved in the Si NC film after B doping, which is due to the reduction of grain boundary (GB) scattering in the B-doped samples. With increasing the doping concentration, it was interesting to find that a metal-insulator transition (MIT) took place in the B-doped Si NC films with high doping concentrations. The different carrier transport properties in the B-doped Si NC films with various doping concentrations were investigated and further discussed with emphasis on the scattering mechanisms in the transport process.

引用

页数：7

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