Femtosecond laser-induced modification at aluminum/diamond interface

被引：2

作者：

Okada, Tatsuya ^{[1
]}

Tomita, Takuro ^{[1
]}

Ueki, Tomoyuki ^{[1
]}

Masai, Yuki ^{[2
]}

Bando, Yota ^{[2
]}

Tanaka, Yasuhiro ^{[3
]}

机构：

[1] Tokushima Univ, Grad Sch Sci & Technol, Tokushima 7708506, Japan

[2] Tokushima Univ, Grad Sch Adv Technol & Sci, Tokushima 7708506, Japan

[3] Kagawa Univ, Fac Engn, Dept Adv Mat Sci, Takamatsu, Kagawa 7610396, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 02期

关键词：

PERIODIC SURFACE-STRUCTURE; DIAMOND DIODES; IRRADIATION; TRANSISTORS; PULSES; FILMS;

D O I：

10.7567/JJAP.56.026601

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated femtosecond-laser-induced modification at an Al/diamond interface. The interface was irradiated from the backside through the diamond substrate, which is transparent to the laser beam. Extremely high pulse energies, i.e., 200 and 100 mu J/pulse, were used to irradiate the interface. The cross-section of the laser-irradiated line was observed with conventional and high-voltage transmission electron microscopy. The modification of the laser-irradiated interface was characterized by the formation of an amorphous phase sandwiched between the deformed Al film and the diamond substrate. The major chemical component of the amorphous phase was identified as carbon, blown from the diamond substrate. The newly formed interface between the amorphous phase and the diamond substrate was concave. In addition, a fine ripple structure with an average spacing one-quarter the wavelength of the laser light was formed only in the sample irradiated by the higher-energy pulses. (C) 2017 The Japan Society of Applied Physics

引用

页数：5

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