Band gap of wurtzite GaAs: A resonant Raman study

被引：67

作者：

Kusch, Patryk ^{[1
]}

Breuer, Steffen ^{[2
]}

Ramsteiner, Manfred ^{[2
]}

Geelhaar, Lutz ^{[2
]}

Riechert, Henning ^{[2
]}

Reich, Stephanie ^{[1
]}

机构：

[1] Free Univ Berlin, Inst Expt Phys, D-14195 Berlin, Germany

[2] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

PHYSICAL REVIEW B | 2012年 / 86卷 / 07期

基金：

欧洲研究理事会;

关键词：

NANOWIRES;

D O I：

10.1103/PhysRevB.86.075317

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report resonant Raman scattering (RRS) by the TO, LO, and 2 LO modes of single wurtzite and zinc-blende GaAs nanowires. The optical band gap of wurtzite GaAs is 1.460 eV +/- 3 meV at room temperature, and 35 +/- 3 meV larger than the GaAs zinc-blende band gap. Raman measurements using incoming light polarized parallel and perpendicular to the wire c axis allowed us to investigate the splitting of heavy Gamma(9) and light-hole Gamma(7) band at the Gamma point of 65 +/- 6 meV.

引用

页数：5

共 25 条

[1] Semiconductor nanowires: optics and optoelectronics
Agarwal, R.
Lieber, C. M.
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2006, 85 (03): : 209 - 215
[2] Vapor-liquid-solid nucleation of GaAs on Si(111): Growth evolution from traces to nanowires
Breuer, S.
Hilse, M.
Trampert, A.
Geelhaar, L.
Riechert, H.
[J]. PHYSICAL REVIEW B, 2010, 82 (07):
[3] Suitability of Au- and Self-Assisted GaAs Nanowires for Optoelectronic Applications
Breuer, Steffen
Pfueller, Carsten
Flissikowski, Timur
Brandt, Oliver
Grahn, Holger T.
Geelhaar, Lutz
Riechert, Henning
[J]. NANO LETTERS, 2011, 11 (03) : 1276 - 1279
[4] Exciton-phonon coupling in individual GaAs nanowires studied using resonant Raman spectroscopy
Brewster, Megan
Schimek, Oliver
Reich, Stephanie
Gradecak, Silvija
[J]. PHYSICAL REVIEW B, 2009, 80 (20):
[5] Cardona M., 1982, LIGHT SCATTERING SOL, VII
[6] Crystal Phases in III-V Nanowires: From Random Toward Engineered Polytypism
Caroff, Philippe
Bolinsson, Jessica
Johansson, Jonas
[J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2011, 17 (04) : 829 - 846
[7] Predicted band structures of III-V semiconductors in the wurtzite phase
De, A.
Pryor, Craig E.
[J]. PHYSICAL REVIEW B, 2010, 81 (15):
[8] Control of III-V nanowire crystal structure by growth parameter tuning
Dick, Kimberly A.
Caroff, Philippe
Bolinsson, Jessica
Messing, Maria E.
Johansson, Jonas
Deppert, Knut
Wallenberg, L. Reine
Samuelson, Lars
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 25 (02)
[9] Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry
Gil, B
Briot, O
Aulombard, RL
[J]. PHYSICAL REVIEW B, 1995, 52 (24): : 17028 - 17031
[10] Bandgap and band discontinuity in wurtzite/zincblende GaAs homomaterial heterostructure
Gurwitz, Ron
Tavor, Asa
Karpeles, Liran
Shalish, Ilan
Yi, Wei
Seryogin, Georgiy
Narayanamurti, Venkatesh
[J]. APPLIED PHYSICS LETTERS, 2012, 100 (19)

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