Band gap of wurtzite GaAs: A resonant Raman study

被引：69

作者：

Kusch, Patryk ^{[1
]}

Breuer, Steffen ^{[2
]}

Ramsteiner, Manfred ^{[2
]}

Geelhaar, Lutz ^{[2
]}

Riechert, Henning ^{[2
]}

Reich, Stephanie ^{[1
]}

机构：

[1] Free Univ Berlin, Inst Expt Phys, D-14195 Berlin, Germany

[2] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

PHYSICAL REVIEW B | 2012年 / 86卷 / 07期

基金：

欧洲研究理事会;

关键词：

NANOWIRES;

D O I：

10.1103/PhysRevB.86.075317

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report resonant Raman scattering (RRS) by the TO, LO, and 2 LO modes of single wurtzite and zinc-blende GaAs nanowires. The optical band gap of wurtzite GaAs is 1.460 eV +/- 3 meV at room temperature, and 35 +/- 3 meV larger than the GaAs zinc-blende band gap. Raman measurements using incoming light polarized parallel and perpendicular to the wire c axis allowed us to investigate the splitting of heavy Gamma(9) and light-hole Gamma(7) band at the Gamma point of 65 +/- 6 meV.

引用

页数：5

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