Electrical properties of amorphous Bi5Nb3O15 thin film for RF MIM capacitors

被引：27
作者：
Cho, Kyung-Hoon [1 ]
Choi, Chang-Hak [1 ]
Hong, Kyoung Pyo [1 ]
Choi, Joo-Young [1 ]
Jeong, Young Hun [1 ]
Nahm, Sahn
Kang, Chong-Yun [2 ]
Yoon, Seok-Jin [1 ,2 ]
Lee, Hwack-Joo [3 ]
机构：
[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea
[2] Korea Inst Sci & Technol, Thin Film Mat Res Ctr, Seoul 136791, South Korea
[3] Korea Res Inst Stand & Sci, New Mat Evaluat Ctr, Taejon 305600, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 07期
关键词：
Bi(5)Nb(3)O(15); high-k; metal-insulator-metal (MIM) capacitor; temperature coefficient of capacitance (TCC); voltage coefficient of capacitance (VCC);
D O I：
10.1109/LED.2008.2000911
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Amorphous Bi(5)Nb(3)O(15)(B(5)N(3)) film grown at 300 degrees C showed a high-k value of 71 at 100 kHz, and similar k value was observed at 0.5-5.0 GHz. The 80-nm-thick film exhibited a high capacitance density of 7.8 fF/mu m(2) and a low dissipation factor, of 0.95% at 100 kHz with a low leakage-current density of 1.23 nA/cm(2) at 1 V. The quadratic and linear voltage coefficient of capacitances of the B(5)N(3) film were 438 ppm/V(2) and 456 ppm/V, respectively, with a low temperature coefficient of capacitance of 309 ppm/degrees C at 100 kHz. These results confirmed the potential of the amorphous B(5)N(3) film as a good candidate material for a high-performance metal-insulator-metal capacitors.
引用
收藏
页码：684 / 687
页数：4
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