Structural studies of Al thin layer on misoriented GaAs(100) substrate by transmission electron microscopy

被引：1

作者：

Lovygin, M. V. ^{[1
]}

Borgardt, N. I. ^{[1
]}

Kazakov, I. P. ^{[2
]}

Seibt, M. ^{[3
]}

机构：

[1] Natl Res Univ Elect Technol, Moscow 124498, Russia

[2] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia

[3] Univ Gottingen, Phys Inst 4, D-37077 Gottingen, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 8 | 2015年 / 12卷 / 08期

关键词：

aluminum; gallium arsenide; vicinal surface; molecular beam epitaxy; transmission electron microscopy; GROWTH; FILMS;

D O I：

10.1002/pssc.201400357

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A thin Al layer has been grown on a misoriented GaAs(100) substrate by molecular beam epitaxy and its structure has been studied by means of transmission electron microscopy. The metal layer is formed as grains of three orientations Al(100), Al(110) and Al(110)R. Digital analysis of dark-field micrographs made it possible to obtain their grain sizes and relative coverage areas. By comparison with an Al layer grown on an exactly oriented GaAs(100) substrate it has been found that on the vicinal surface the relative coverage area and grain size of the Al(110) R orientation increase and the Al(100) relative coverage area decreases. This is attributed to surface atomic steps, which have been visualized in high-resolution micrographs. The edge misfit dislocation system at the Al/GaAs interface has been revealed, which is insensitive to the substrate misorientation. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1148 / 1151

页数：4

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