Improved Light Extraction Efficiency of a High-Power GaN-Based Light-Emitting Diode With a Three-Dimensional-Photonic Crystal (3-D-PhC) Backside Reflector

被引：29
作者：
Chang, Yu-Chih [1 ]
Liou, Jian-Kai [1 ]
Liu, Wen-Chau [1 ]
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 06期
关键词：
Air void; GaN; light-emitting diodes (LEDs); light extraction efficiency (LEE); nanosphere; photonic crystal (PhC);
D O I：
10.1109/LED.2013.2255020
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An interesting approach to improving the light extraction efficiency of high-power GaN-based light-emitting diodes (LEDs) by the use of a 3-D-photonic crystal (3-D-PhC) backside reflector is studied. A 3-D-PhC backside reflector is formed by coating a self-assembled SiO2 nanosphere monolayer between the hybrid reflector and backside of a sapphire substrate. The 3-D-PhC structure is used to enhance light scattering. At 350 mA, as compared with a conventional LED (with a hybrid reflector while only without the 3-D-PhC structure), the studied device exhibits 23.6% enhancement in the light output power without the degradation of electrical properties. Therefore, the performance of high-power GaN-based LEDs could be further improved by using a 3-D-PhC backside reflector.
引用
收藏
页码：777 / 779
页数：3
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