Dependence Analysis of the GaN HEMT Parameters for Space Application on the Thickness AlGaN Barrier Layer by Numerical Simulation

被引：0
|
作者：
Aleksandr, Gudkov [1 ]
Shashurin, Vasiliy [1 ]
Vyuginov, Vladimir [2 ]
Tikhomirov, Vladimir [3 ]
Vidyakin, Svyatoslav [1 ]
Agasieva, Svetlana [1 ]
Chizhikov, Sergey [1 ]
机构：
[1] Bauman Moscow State Tech Univ, Dept Design & Technol Radioelect Devices, Moscow, Russia
[2] Svetlana Elektronpribor, St Petersburg, Russia
[3] SPbEU LETI, Dept Radiotech & Elect, St Petersburg, Russia
来源：
2017 IEEE 2ND INTERNATIONAL CONFERENCE ON OPTO-ELECTRONIC INFORMATION PROCESSING (ICOIP) | 2017年
关键词：
heterostructure; GaN HEMT; space application; numerical simulation; CURRENT-VOLTAGE CHARACTERISTICS; HETEROSTRUCTURES; TRANSISTORS; GATE; DC;
D O I：
暂无
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
Numerical simulation of field-effect microwave high-electron-mobility transistors (HEMTs) based on GaN/AlN/AlGaN heterostructures are performed. The results of the study showed that the optimal thicknesses of the AlGaN barrier layer, allowing high microwave power implementation
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页码：79 / 82
页数：4
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