H2/N2 Plasma Etching Rate of Carbon Films Deposited by H-Assisted Plasma Chemical Vapor Deposition

被引：3

作者：

Urakawa, Tatsuya ^{[1
]}

Torigoe, Ryuhei ^{[1
]}

Matsuzaki, Hidefumi ^{[1
]}

Yamashita, Daisuke ^{[1
]}

Uchida, Giichiro ^{[1
]}

Koga, Kazunori ^{[1
,4
]}

Shiratani, Masaharu ^{[1
,4
]}

Setsuhara, Yuichi ^{[2
,4
]}

Takeda, Keigo ^{[3
]}

Sekine, Makoto ^{[3
,4
]}

Hori, Masaru ^{[4
]}

机构：

[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Dept Elect, Fukuoka 8190395, Japan

[2] Osaka Univ, Joining & Welding Res Inst, Ibaraki, Osaka 5670047, Japan

[3] Nagoya Univ, Grad Sch Engn, Dept Elect Engn & Comp Sci, Nagoya, Aichi 4648603, Japan

[4] Japan Sci & Technol Agcy JST, CREST, Kawaguchi, Saitama 3320012, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 01期

关键词：

CU;

D O I：

10.7567/JJAP.52.01AB01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Etching resistance of carbon films deposited by plasma chemical vapor deposition (CVD) is one of the concerns to fabricate nanostructures using such carbon films as protective coating films and dummy films. We have carried out H-2/N-2 plasma etching of carbon films deposited by using an H-assisted plasma CVD method. The etching rate of carbon films decreases exponentially with increasing the mass density of carbon films from 1.51 to 2.27 g/cm(3). The mass density of carbon films is the key parameter to tune the etching resistance. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

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