Fabrication of Ti ohmic contact to n-type 6H-SiC without high-temperature annealing

被引：2

作者：

Chang Shao-Hui ^{[1
]}

Liu Xue-Chao ^{[1
]}

Huang Wei ^{[1
]}

Xiong Ze ^{[1
]}

Yang Jian-Hua ^{[1
]}

Shi Er-Wei ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China

来源：

CHINESE PHYSICS B | 2012年 / 21卷 / 09期

基金：

中国国家自然科学基金;

关键词：

Ti contact; 6H-SiC; HF acid; H-2; treatment; INFRARED-SPECTROSCOPY; HYDROGEN TERMINATION; SURFACE-MORPHOLOGY; HF TREATMENT; FERMI-LEVEL; SI(111); PASSIVATION; SCHOTTKY; EPITAXY; NICKEL;

D O I：

10.1088/1674-1056/21/9/096801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The effect of surface morphology of 6H-SiC substrate on the ohmic contact properties of Ti/6H-SiC structure is studied. The H-terminated surface on Si-face 6H-SiC is obtained by both dipping SiC into HF acid solution for 15 s and thermal heating SiC in hydrogen atmosphere at 1100 degrees C for 10 min, while the H-terminated surface on C-face 6H-SiC could be obtained only by the latter method. Ti is deposited on Si-face and C-face SiC substrates with H-terminated surfaces and ohmic contact is obtained without high-temperature annealing.

引用

页数：4

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