Fabrication of Ti ohmic contact to n-type 6H-SiC without high-temperature annealing

被引：2

作者：

Chang Shao-Hui ^{[1
]}

Liu Xue-Chao ^{[1
]}

Huang Wei ^{[1
]}

Xiong Ze ^{[1
]}

Yang Jian-Hua ^{[1
]}

Shi Er-Wei ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China

来源：

CHINESE PHYSICS B | 2012年 / 21卷 / 09期

基金：

中国国家自然科学基金;

关键词：

Ti contact; 6H-SiC; HF acid; H-2; treatment; INFRARED-SPECTROSCOPY; HYDROGEN TERMINATION; SURFACE-MORPHOLOGY; HF TREATMENT; FERMI-LEVEL; SI(111); PASSIVATION; SCHOTTKY; EPITAXY; NICKEL;

D O I：

10.1088/1674-1056/21/9/096801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The effect of surface morphology of 6H-SiC substrate on the ohmic contact properties of Ti/6H-SiC structure is studied. The H-terminated surface on Si-face 6H-SiC is obtained by both dipping SiC into HF acid solution for 15 s and thermal heating SiC in hydrogen atmosphere at 1100 degrees C for 10 min, while the H-terminated surface on C-face 6H-SiC could be obtained only by the latter method. Ti is deposited on Si-face and C-face SiC substrates with H-terminated surfaces and ohmic contact is obtained without high-temperature annealing.

引用

页数：4

共 48 条

[1] Fabrication of Ti ohmic contact to n-type 6H-SiC without high-temperature annealing
常少辉
刘学超
黄维
熊泽
杨建华
施尔畏
Chinese Physics B, 2012, 21 (09) : 410 - 413
[2] Ti/Ni/Ti/Au ohmic contact to n-type 6H-SiC
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MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 98 (02): : 177 - 180
[3] Role of titanium in Ti/Ni ohmic contact on n-type 6H-SiC
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MICROELECTRONIC ENGINEERING, 2010, 87 (03) : 274 - 277
[4] Formation of Ohmic contacts on laser irradiated n-type 6H-SiC without thermal annealing
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CURRENT APPLIED PHYSICS, 2019, 19 (04) : 521 - 527
[5] 500 °C high-temperature reliability of Ni/Nb ohmic contact on n-type 4H-SiC
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[6] Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review
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[7] Structural characterization of Ni and Ni/Ti ohmic contact on n-type 4H-SiC
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APPLIED SURFACE SCIENCE, 2011, 257 (24) : 10737 - 10742
[8] Effect of graphite related interfacial microstructure created by high temperature annealing on the contact properties of Ni/Ti/6H-SiC
Zhou, Tian-Yu
Liu, Xue-Chao
Dai, Chong-Chong
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MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2014, 188 : 59 - 65
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[10] Development of an Extreme High Temperature n-type Ohmic Contact to Silicon Carbide
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Okojie, Robert S.
Lukco, Dorothy
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 841 - +

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