Effect of the out-of-plane stress on the properties of epitaxial SrTiO3 films with nano-pillar array on Si-substrate

被引:5
作者
Bai, Gang [1 ,2 ,3 ]
Xie, Qiyun [1 ,2 ]
Liu, Zhiguo [3 ]
Wu, Dongmei [4 ]
机构
[1] Nanjing Univ Posts & Telecommun, Jiangsu Prov Engn Lab RF Integrat & Micropackagin, Nanjing 210023, Jiangsu, Peoples R China
[2] Nanjing Univ Posts & Telecommun, Coll Elect Sci & Engn, Nanjing 210023, Jiangsu, Peoples R China
[3] Nanjing Univ, Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[4] Nanjing Univ Posts & Telecommun, Sch Automat, Nanjing 210023, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
THIN-FILMS; STRONTIUM-TITANATE; PHASE-DIAGRAMS; TEMPERATURES; SILICON; MEMORY; STRAIN;
D O I
10.1063/1.4928631
中图分类号
O59 [应用物理学];
学科分类号
摘要
A nonlinear thermodynamic formalism has been proposed to calculate the physical properties of the epitaxial SrTiO3 films containing vertical nano-pillar array on Si-substrate. The out-of-plane stress induced by the mismatch between film and nano-pillars provides an effective way to tune the physical properties of ferroelectric SrTiO3 films. Tensile out-of-plane stress raises the phase transition temperature and increases the out-of-plane polarization, but decreases the out-of-plane dielectric constant below Curie temperature, pyroelectric coefficient, and piezoelectric coefficient. These results showed that by properly controlling the out-of-plane stress, the out-of-plane stress induced paraelectric-ferroelectric phase transformation will appear near room temperature. Excellent dielectric, pyroelectric, piezoelectric properties of these SrTiO3 films similar to PZT and other lead-based ferroelectrics can be expected. (C) 2015 AIP Publishing LLC.
引用
收藏
页数:5
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