UV-Visible optical photo-detection from porous silicon (PS) MSM device

被引：14
作者：
Das, M. [1 ]
Sarmah, S. [1 ]
Sarkar, D. [1 ]
机构：
[1] Gauhati Univ, Dept Phys, Gauhati 781014, Assam, India
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2017年 / 101卷
关键词：
Porous silicon; MSM device; Responsivity; Photodetector; BLIND ULTRAVIOLET PHOTODETECTORS; HETEROJUNCTION; PHOTORESPONSE; ARRAYS;
D O I：
10.1016/j.spmi.2016.11.052
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Si photodiodes have been in use as UV detectors and some compound semiconductors as visible detectors. However their implementation to the optoelectronic field is limited due to high fabrication cost and/or sophisticated prerequisites. The present article aims at fabricating porous silicon Metal-Semiconductor-Metal structure and its photodetection property for the UV wavelength range from 250 to 390 nm along with a portion of visible spectrum. PS thickness attained is similar to 2 mu m with uniform distribution of pores. It shows characteristic visible yellow/green luminescence under 1N-Visible irradiation. The responsivities, obtained through photoconductivity measurement of the device, are obtained as 1.42 and 2.00 AW(-1) for UV and visible ranges respectively, whereas the response times in corresponding ranges as 0.70 and 1.00 s. These results suggest superiority of the device as a UV-Visible detector compared to silicon or other semiconductor detectors. However, the device shows ageing effect due to slow oxidation of the PS layer. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：228 / 235
页数：8
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