Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

被引：20

作者：

Jimenez, David ^{[1
]}

Miranda, Enrique ^{[1
]}

Tsurumaki-Fukuchi, Atsushi ^{[2
]}

Yamada, Hiroyuki ^{[2
,3
]}

Sune, Jordi ^{[1
]}

Sawa, Akihito ^{[2
]}

机构：

[1] Univ Autonoma Barcelona, Escola Engn, Dept Engn Elect, E-08193 Barcelona, Spain

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058562, Japan

[3] JST, PRESTO, Kawaguchi, Saitama 3320012, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 26期

关键词：

ELECTRORESISTANCE; TRANSPORT;

D O I：

10.1063/1.4855155

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the feasibility of multilevel recording in Pt/Bi1-delta FeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi1-delta FeO3 interface. A tunable population of up and down ferroelectric domains able to modulate the Schottky barrier height at the Pt/Bi1-delta FeO3 interface can be achieved by means of either a collection of SET/RESET voltages or current compliances. This programming scheme gives rise to well defined resistance states, which form the basis for a multilevel storage nonvolatile memory. (C) 2013 AIP Publishing LLC.

引用

页数：4

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