Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

被引：20
作者：
Jimenez, David [1 ]
Miranda, Enrique [1 ]
Tsurumaki-Fukuchi, Atsushi [2 ]
Yamada, Hiroyuki [2 ,3 ]
Sune, Jordi [1 ]
Sawa, Akihito [2 ]
机构：
[1] Univ Autonoma Barcelona, Escola Engn, Dept Engn Elect, E-08193 Barcelona, Spain
[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058562, Japan
[3] JST, PRESTO, Kawaguchi, Saitama 3320012, Japan
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 26期
关键词：
ELECTRORESISTANCE; TRANSPORT;
D O I：
10.1063/1.4855155
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate the feasibility of multilevel recording in Pt/Bi1-delta FeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi1-delta FeO3 interface. A tunable population of up and down ferroelectric domains able to modulate the Schottky barrier height at the Pt/Bi1-delta FeO3 interface can be achieved by means of either a collection of SET/RESET voltages or current compliances. This programming scheme gives rise to well defined resistance states, which form the basis for a multilevel storage nonvolatile memory. (C) 2013 AIP Publishing LLC.
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页数：4
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