Investigation of Retention Behavior for 3D Charge Trapping NAND Flash Memory by 2D Self-Consistent Simulation

被引：0

作者：

Lun, Zhiyuan ^{[1
]}

Liu, Shuhuan ^{[1
]}

He, Yuan ^{[1
]}

Hou, Yi ^{[1
]}

Zhao, Kai ^{[1
]}

Du, Gang ^{[1
]}

Liu, Xiaoyan ^{[1
]}

Wang, Yi ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

2014 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) | 2014年

关键词：

retention; charge trapping; NAND flash; two-dimensional simulation; TRANSPORT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a comprehensive investigation on retention behavior for three-dimensional charge trapping NAND flash memory by two-dimensional self-consistent simulation. Major physical mechanisms, including tunneling, charge trapping and de-trapping process as well as drift-diffusion have been incorporated into the simulator. The developed simulator is able to describe the charge transport along the bitline and in vertical direction in the memory structure. This work aims to help to design and optimize three-dimensional stackable CT-NAND architectures.

引用

页码：141 / 144

页数：4

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