Structural, optical and electrical properties of ZnO:Al thin films for optoelectronic applications

被引：82

作者：

Ammaih, Youssef ^{[1
]}

Lfakir, Abderrazak ^{[1
]}

Hartiti, Bouchaib ^{[1
]}

Ridah, Abderraouf ^{[1
]}

Thevenin, Philippe ^{[2
]}

Siadat, Meryane ^{[3
]}

机构：

[1] Fac Sci & Technol, Lab LPMAER, Mohammadia, Morocco

[2] Univ Lorraine, Lab LMOPS, Lorraine, France

[3] Univ Lorraine, Lab LASC, Lorraine, France

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2014年 / 46卷 / 01期

关键词：

ZnO:Al; Sol-gel; XRD; Transmittance; Optical band gap; Electrical resistivity; DEPOSITION; PHOTOLUMINESCENCE; STABILITY; LAYER; CVD;

D O I：

10.1007/s11082-013-9757-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Undoped and aluminum-doped ZnO thin films are prepared by the sol-gel spin-coating process. Zinc acetate dihydrate, ethanol and mono-ethanolamine are used as precursor, solvent and stabilizer, respectively. The atomic percentage of dopant in solution were [Al/Zn] = 1 %, 2 % and 3 %. The effect of Al doping on the optical and electrical properties of ZnO films was investigated by X-ray diffraction (XRD), Four-Point probe technique and UV-visible spectrophotometery. The results from the X-ray diffraction show that the pure ZnO thin films had a polycrystalline structure of the hexagonal Wurtzite Type. A minimum resistivity of was obtained for the film doped with 2 mol % Al. Optical transmissions reveal a good transmittance within the visible wavelength spectrum region for all of the films. The value of the band gap is enhanced from 3.21 eV (undoped ZnO) to 3.273 eV (Al/Zn = 3 %), the increase in the band gap can be explained by the Burstein-Moss effect.

引用

页码：229 / 234

页数：6

共 19 条

[1] Atomic Layer Deposition of Undoped and Al-Doped ZnO Thin Films Using the Zn Alkoxide Precursor Methylzinc lsopropoxide [J].