Strain induced electronic and magnetic properties of 2D magnet CrI3: a DFT approach

被引:32
作者
Mukherjee, Tista [1 ]
Chowdhury, Suman [2 ]
Jana, Debnarayan [3 ]
Voon, L. C. Lew Yan [4 ]
机构
[1] Presidency Univ, Dept Phys, 86-1 Coll St, Kolkata 700073, WB, India
[2] Bangabasi Coll, Dept Phys, 19 Rajkumar Chakraborty Sarani, Kolkata 700009, WB, India
[3] Univ Calcutta, Dept Phys, 92 Acharya Prafulla Chandra Rd, Kolkata 700009, WB, India
[4] Univ West Georgia, Coll Sci & Math, Carrollton, GA USA
关键词
2D materials; magnetism; density functional theory; electronic structure; OPTICAL-PROPERTIES; NOBEL LECTURE; FERROMAGNETISM; SUPERCONDUCTIVITY; NANOSHEETS; CRYSTAL;
D O I
10.1088/1361-648X/ab1fcf
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In the post-graphene era, out of several monolayer 2D materials, Chromium triiodide (CrI3) has triggered an exotic platform for studying the intrinsic ferromagnetism and large anisotropy at the nanoscale regime. Apart from that, its strong spin-orbit coupling of I also plays a key role in tailoring the electronic properties. In this work, the composition of compressive and tensile strain (uniaxial as well as biaxial) upto 12% have been applied to study the variation of the electronic and magnetic properties of CrI3 employing density functional theory in (LDA+U) exchange correlation scheme. The stability limits of the structures under the influence of strains have been carried out via the deformation potential (DP) and stress-strain relation. For compressive strains in specific directions, the down-spin band gap is seen to be decreasing steadily. The magnetic moment computed from the density of states (DOS) is enhanced significantly under the influence of compressive strain. However, it has been observed that after the application of strain in some specific crystal directions, the magnetic moment of monolayer CrI3 remains almost unchanged. Thus, with the help of strain, the tunning band gap along with underlying characteristic ferromagnetism of this material can unfold a new avenue for potential usage in spintronic devices.
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页数:11
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