Dielectric relaxation, modulus behavior and conduction mechanism in Sb2S3 thin films

被引：64
作者：
Lakhdar, M. Haj [1 ]
Ouni, B. [1 ]
Amlouk, M. [1 ]
机构：
[1] Tunis El Manar Univ, Fac Sci Tunis, Unite Phys Dispositifs Semicond, Tunis 2092, Tunisia
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2014年 / 19卷
关键词：
AC conductivity; Dielectric constants; Complex electric modulus; AC CONDUCTIVITY; OPTICAL-PROPERTIES;
D O I：
10.1016/j.mssp.2013.11.038
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we report some physical properties of Sb2S3 thin films obtained through thermal treatment of Sb thin films under a sulfur atmosphere at temperature 300 degrees C. X-ray diffraction indicated that Sb2S3 thin films were crystallized in orthorhombic structure. The electrical conductivity, conduction mechanism, dielectric properties and relaxation model of this thin film were indeed studied using impedance spectroscopy technique in the frequency range 5 Hz-13 MHz at various temperatures (578-638 K). Besides, the frequency and temperature dependence of the complex impedance, AC conductivity and complex electric modulus has been investigated. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：32 / 39
页数：8
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