Direct Nanomachining on Semiconductor Wafer By Scanning Electrochemical Microscopy

被引:17
作者
Han, Lianhuan [1 ,2 ,3 ,4 ,5 ]
Hu, Zhenjiang [1 ,2 ]
Sartin, Matthew M. [4 ,5 ]
Wang, Xiaole [1 ,2 ]
Zhao, Xuesen [1 ,2 ]
Cao, Yongzhi [1 ,2 ]
Yan, Yongda [1 ,2 ]
Zhan, Dongping [4 ,5 ]
Tian, Zhong-Qun [4 ,5 ]
机构
[1] Harbin Inst Technol, Minist Educ, Dept Key Lab Microsyst & Microstruct Mfg, Harbin 150001, Peoples R China
[2] Harbin Inst Technol, Ctr Precis Engn, Harbin 150001, Peoples R China
[3] Xiamen Univ, Sch Aerosp Engn, Dept Mech & Elect Engn, Xiamen 361005, Peoples R China
[4] Xiamen Univ, State Key Lab Phys Chem Solid Surfaces PCOSS, Collaborat Innovat Ctr Chem Energy Mat iChEM, Engn Res Ctr Electrochem Technol,Minist Educ, Xiamen 361005, Peoples R China
[5] Xiamen Univ, Coll Chem & Chem Engn, Dept Chem, Xiamen 361005, Peoples R China
基金
中国国家自然科学基金;
关键词
electrochemical nanomachining; nanopatterning; SECM; semiconductors; GALLIUM-ARSENIDE; FEEDBACK MODE; RESOLUTION; DEPOSITION; KINETICS; SYSTEM; PROBE; SECM;
D O I
10.1002/anie.202008697
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Scanning electrochemical microscopy (SECM) is one of the most important instrumental methods of modern electrochemistry due to its high spatial and temporal resolution. We introduced SECM into nanomachining by feeding the electrochemical modulations of the tip electrode back to the positioning system, and we demonstrated that SECM is a versatile nanomachining technique on semiconductor wafers using electrochemically induced chemical etching. The removal profile was correlated to the applied tip current when the tip was held stationary and when it was moving slowly (<20 mu m s(-1)), and it followed Faraday's law. Both regular and irregular nanopatterns were translated into a spatially distributed current by the homemade digitally controlled SECM instrument. The desired nanopatterns were "sculpted" directly on a semiconductor wafer by SECM direct-writing mode. The machining accuracy was controlled to the sub-micrometer and even nanometer scales. This advance is expected to play an important role in electrochemical nanomachining for 3D micro/nanostructures in the semiconductor industry.
引用
收藏
页码:21129 / 21134
页数:6
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