All-optical THz wave switching based on CH3NH3PbI3 perovskites

被引:33
|
作者
Lee, Kyu-Sup [1 ]
Kang, Rira [2 ]
Son, Byungwoo [1 ]
Kim, Dong-Yu [3 ]
Yu, Nan Ei [4 ]
Ko, Do-Kyeong [1 ]
机构
[1] GIST, Dept Phys & Photon Sci, Gwangju 61005, South Korea
[2] Korea Atom Energy Res Inst, Radiat Res Div Ind & Environm, Jeongup 56212, Jeollabuk Do, South Korea
[3] GIST, Heeger Ctr Adv Mat, Sch Mat Sci & Engn, Gwangju 61005, South Korea
[4] GIST, Adv Photon Res Inst, Gwangju 61005, South Korea
来源
SCIENTIFIC REPORTS | 2016年 / 6卷
基金
新加坡国家研究基金会;
关键词
FAR-INFRARED RADIATION; DOPED SILICON; TERAHERTZ; MODULATION;
D O I
10.1038/srep37912
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Hybrid structures of silicon with organic-inorganic perovskites are proposed for optically controllable switching of terahertz (THz) waves over a broad spectral range from 0.2 to 2THz. A 532-nm external laser was utilized to generate photoexcited free carriers at the devices and consequentially to control the terahertz amplitude modulation, obtaining a depth of up to 68% at a laser irradiance of 1.5 W/cm(2). In addition, we compared the performances from three types of perovskite devices fabricated via different solution processing methods and suggested a stable and highly efficient THz switch based on a one-step processing. By this we demonstrated the possibility of perovskites as THz wave switching devices in addition to photovoltaics.
引用
收藏
页数:6
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