High-performance three-dimensional on-chip inductors fabricated by novel micromachining technology for RF MMIC

被引:0
作者
Yoon, JB [1 ]
Han, CH [1 ]
Yoon, E [1 ]
Kim, CK [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Yusong Gu, Taejon 305701, South Korea
来源
1999 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4 | 1999年
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using novel micromachining technology, various three-dimensional (3D) on-chip inductors have been fabricated to achieve high performance and small area occupation for GHz applications. We have obtained 14nH, a peak Q of 38 at 1.8GHz with area occupation of 500 mu m by 500 mu m excluding pads (56nH/mm(2)) from a stacked spiral inductor on a glass substrate. Also, 1.75nH and a peak Q of 57 at 10GHz have been obtained from a levitated spiral inductor.
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页码:1523 / 1526
页数:4
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