Transparent High-Performance Thin Film Transistors from Solution-Processed SnO2/ZrO2 Gel-like Precursors

被引：142

作者：

Jang, Jaewon ^{[1
]}

Kitsomboonloha, Rungrot ^{[1
]}

Swisher, Sarah L. ^{[1
]}

Park, Eung Seok ^{[1
]}

Kang, Hongki ^{[1
]}

Subramanian, Vivek ^{[1
,2
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[2] Sunchon Natl Univ, World Class Univ Program, Sunchon 540742, Jeonnam, South Korea

来源：

ADVANCED MATERIALS | 2013年 / 25卷 / 07期

关键词：

SnO2; ZrO2; thin film transistors; solution process; solgel process; transparent; metal oxides; TIN DIOXIDE FILMS; ZNO; TEMPERATURE; DEPOSITION; MOBILITY; VOLTAGE; LAYER;

D O I：

10.1002/adma.201202997

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

This work employs novel SnO2 gel-like precursors in conjunction with sol-gel deposited ZrO2 gate dielectrics to realize high-performance transparent transistors. Representative devices show excellent performance and transparency, and deliver mobility of 103 cm2 V -1 s-1 in saturation at operation voltages as low as 2 V, a sub-threshold swing of only 0.3 V/decade, and Ion/Ioff of 104∼105. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1042 / 1047

页数：6

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