Improving Integrated Circuit Performance Through the Application of Hardness-by-Design Methodology

被引:114
作者
Lacoe, Ronald C. [1 ]
机构
[1] Aerosp Corp, Los Angeles, CA 90009 USA
关键词
Hardness-by-design (HBD); multibit upsets; single-event latchup; single-event transient; single-event upset; total-ionizing dose radiation;
D O I
10.1109/TNS.2008.2000480
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Increased space system performance is enabled by access to high-performance, low-power radiation-hardened microelectronic components. While high performance can be achieved using commercial CMOS foundries, it is necessary to mitigate radiation effects. This paper describes approaches to fabricating radiation-hardened components at commercial CMOS foundries by the application of novel design techniques at the transistor level, the cell level, and at the system level. This approach is referred to as hardness-by-design. In addition, trends in the intrinsic radiation hardness of commercial CMOS processes will be discussed.
引用
收藏
页码:1903 / 1925
页数:23
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