Understanding internal stress evolution mechanisms associated with field crystallization of anodic tantalum oxide

被引:2
作者
Yang, Lei [1 ,2 ]
Viste, Mark [3 ]
Hossick-Schott, Joachim [3 ]
Sheldon, Brian W. [2 ]
机构
[1] Soochow Univ, Affiliated Hosp 1, Inst Orthopaed, Suzhou 215006, Peoples R China
[2] Brown Univ, Sch Engn, Providence, RI 02912 USA
[3] Medtron Energy & Components Ctr, Brooklyn Ctr, MN 55430 USA
基金
美国国家科学基金会;
关键词
Internal stress; Anodic tantalum oxide; Crystallization; Tantalumcapacitor; THIN-FILMS; ELECTROSTRICTION; HYDRATION; ALUMINUM;
D O I
10.1007/s10832-013-9859-z
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Previous study has demonstrated that field crystallization of anodic tantalum oxide (ATO) films is associated with large in-plane compressive stresses that evolve in several characteristic stages. The mechanism(s) associated with this stress evolution are not well defined, and the impact of these stresses on the field crystallization process requires further understanding. This work reports investigations of the stress evolution that are designed to evaluate contributions from hydration of the amorphous Ta oxide (ATO), electrostriction and crystal growth. Stresses were monitored in situ with a multi-beam optical technique, to elucidate these different contributions. Measurements were conducted during exposure to the acid electrolyte with and without an applied field, and also during different growth stages. The stress evolution mechanisms include contributions from reactions with the electrolyte (hydration), electrostriction and growth of amorphous and crystalline oxides. In addition, a strong linear correlation between stress evolution and crystal growth was established during longer exposure to electric field.
引用
收藏
页码:108 / 116
页数:9
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