Transport properties and defects in silicon nanoparticles and effect of embedding in amorphous silicon layers

被引：2

作者：

Gueunier-Farret, M. E.

Kleider, J. P.

Voigt, F.

Brueggemann, R.

Bauer, G. H.

Huisken, F.

Ledoux, G.

机构：

[1] Univ Paris 06, Lab Genie Elect Paris, UMR 8507, CNRS, F-91192 Gif Sur Yvette, France

[2] Univ Paris 11, SUPELEC, F-91192 Gif Sur Yvette, France

[3] Carl Von Ossietzky Univ Oldenburg, Inst Phys, D-26111 Oldenburg, Germany

[4] Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2006年 / 352卷 / 9-20期

关键词：

silicon; electrical and electronic properties; nanoparticles;

D O I：

10.1016/j.jnoncrysol.2005.11.096

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We study the properties of silicon nanoparticles produced by CO2 laser pyrolysis of silane in a gas flow reactor, and the effect of sandwiching a thin layer of such particles between two a-Si:H layers. Contrary to the case of hydrogenated polymorphous silicon for which it is known that the electronic and stability properties can be enhanced compared to conventional hydrogenated amorphous silicon, the electronic properties of such a sandwich structure are degraded and the number of deep defects is increased. (c) 2006 Elsevier B.V. All rights reserved.

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页码：1101 / 1104

页数：4

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