60 Gbit/s Silicon Modulators with Enhanced Electro-optical Efficiency

被引：0

作者：

Xiao, Xi ^{[1
]}

Xu, Hao ^{[1
]}

Li, Xianyao ^{[1
]}

Li, Zhiyong ^{[1
]}

Chu, Tao ^{[1
]}

Yu, Jinzhong ^{[1
]}

Yu, Yude ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

2013 OPTICAL FIBER COMMUNICATION CONFERENCE AND EXPOSITION AND THE NATIONAL FIBER OPTIC ENGINEERS CONFERENCE (OFC/NFOEC) | 2013年

关键词：

INTERLEAVED PN JUNCTIONS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present 60 Gbit/s silicon MZI and microring modulators with the PN junctions and electrodes designed for improved modulation efficiency and high speed. WDM modulations of 4x50 Gbit/s have also been demonstrated based on microring modulators.

引用

页数：3

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