Electrical characteristics of CdTe:Pb single crystals at high temperatures

被引:3
作者
Fochuk, P. M. [1 ]
Parfenyuk, O. A. [1 ]
Panchuk, O. E. [1 ]
机构
[1] Fedkovich State Univ, UA-58012 Chernovtsy, Ukraine
关键词
72.80.Ey;
D O I
10.1134/S1063782606060066
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The electrical properties of CdTe:Pb single crystals at high temperatures (400-900 degrees C) and under controlled Cd vapor pressure (0.001-3 atm) were investigated for the first time. The temperature and baric dependences of the conductivity and Hall coefficient were measured. Low ( in comparison with undoped CdTe) electron concentration indicates an increase in the number of impurity point defects related to the Pb impurity. The results obtained are explained within the Kroger theory of quasi-chemical reactions of defect formation on the assumption that lead may exist in the isolated state (Pb-Cd(+)) and as a component of (PbCd+VCd2-)(-) associates.
引用
收藏
页码:646 / 650
页数:5
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